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Superconducting contacts to a monolayer semiconductor
Journal
Nano Letters
Volume
21
Number
13
Pages / Article-Number
5614-5619
Keywords
K_Graphene K_ERC K_Supra
Abstract
We demonstrate superconducting vertical interconnect access (VIA) contacts to a mono-layer of molybdenum disulfide (MoS2), a layered semiconductor with highly relevant elec-tronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS2 regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the band-structure and the high intrinsic carrier mobility remain intact in the bulk of the MoS2. This type of VIA contact is applicable to a large variety of layered materials and superconducting
