Data Entry: Please note that the research database will be replaced by UNIverse by the end of October 2023. Please enter your data into the system https://universe-intern.unibas.ch. Thanks

Login for users with Unibas email account...

Login for registered users without Unibas email account...

 
A singlet-triplet hole spin qubit in planar Ge
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)
 
ID 4631355
Author(s) Jirovec, Daniel; Hofmann, Andrea; Ballabio, Andrea; Mutter, Philipp M.; Tavani, Giulio; Botifoll, Marc; Crippa, Alessandro; Kukucka, Josip; Sagi, Oliver; Martins, Frederico; Saez-Mollejo, Jaime; Prieto, Ivan; Borovkov, Maksim; Arbiol, Jordi; Chrastina, Daniel; Isella, Giovanni; Katsaros, Georgios
Author(s) at UniBasel Hofmann, Andrea
Year 2021
Title A singlet-triplet hole spin qubit in planar Ge
Journal Nature Materials
Volume 20
Number 8
Pages / Article-Number 1106-1112
Keywords Quantum dots,Quantum information,Qubits
Abstract Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductorâEuro"semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $mu$s, which we extend beyond 150 $mu$s using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies.
Publisher Nature Publishing Group
ISSN/ISBN 1476-1122 ; 1476-4660
URL https://arxiv.org/pdf/2011.13755.pdf
edoc-URL https://edoc.unibas.ch/85263/
Full Text on edoc No
Digital Object Identifier DOI 10.1038/s41563-021-01022-2
PubMed ID http://www.ncbi.nlm.nih.gov/pubmed/34083775
ISI-Number 000657596400001
Document type (ISI) Journal Article
 
   

MCSS v5.8 PRO. 0.347 sec, queries - 0.000 sec ©Universität Basel  |  Impressum   |    
25/04/2024