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Ambipolar quantum dots in undoped silicon fin field-effect transistors
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift) |
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ID |
4498798 |
Author(s) |
Kuhlmann, Andreas V.; Deshpande, Veeresh; Camenzind, Leon C.; Zumbuhl, Dominik M.; Fuhrer, Andreas |
Author(s) at UniBasel |
Zumbühl, Dominik
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Year |
2018 |
Title |
Ambipolar quantum dots in undoped silicon fin field-effect transistors |
Journal |
APPLIED PHYSICS LETTERS |
Volume |
113 |
Number |
12 |
Pages / Article-Number |
122107 |
Abstract |
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly doped source and drain electrodes by a metallic nickel silicide with the Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, as either a classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes. Published by AIP Publishing. |
Publisher |
AMER INST PHYSICS |
ISSN/ISBN |
0003-6951 |
Full Text on edoc |
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Digital Object Identifier DOI |
10.1063/1.5048097 |
ISI-Number |
ISI:000445366200027 |
Document type (ISI) |
Article |
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26/04/2024
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