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Addressing the electronic properties of III–V nanowires by photoluminescence excitation spectroscopy
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)
 
ID 4266315
Author(s) De Luca, Marta
Author(s) at UniBasel De Luca, Marta
Year 2017
Title Addressing the electronic properties of III–V nanowires by photoluminescence excitation spectroscopy
Journal Journal of Physics D: Applied Physics
Volume 50
Number 5
Pages / Article-Number 054001
Abstract Semiconductor nanowires (NWs) have been attracting an increasing interest in the scientific community. This is due to their peculiar filamentary shape and nanoscale diameter, which renders them versatile and cost-effective components of novel technological devices and also makes them an ideal platform for the investigation of a variety of fascinating physical effects. Absorption spectroscopy is a powerful and non-destructive technique able to provide information on the physical properties of the NWs. However, standard absorption spectroscopy is hard to perform in NWs, because of their small volume and the presence of opaque substrates. Here, we demonstrate that absorption can be successfully replaced by photoluminescence excitation (PLE). First, the use of polarization-resolved PLE to address the complex and highly-debated electronic band structure of wurtzite GaAs and InP NWs is shown. Then, PLE is used as a statistically-relevant method to localize the presence of separate wurtzite and zincblende NWs in the same InP sample. Finally, a variety of resonant exotic effects in the density of states of In x Ga1−x As/GaAs core/shell NWs are highlighted by high-resolution PLE.
Publisher IOP Publishing
ISSN/ISBN 0022-3727 ; 1361-6463
edoc-URL https://edoc.unibas.ch/59680/
Full Text on edoc No
Digital Object Identifier DOI 10.1088/1361-6463/50/5/054001
ISI-Number WOS:000393678200001
Document type (ISI) Article
 
   

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