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Structure and band gaps of Ga-(V) semiconductors: The challenge of Ga pseudopotentials
Journal
Physical review B: Condensed matter and materials physics
Volume
77
Number
11
Pages / Article-Number
115202
Abstract
Design of gallium pseudopotentials has been investigated for use in density functional calculations of zinc-blende-type cubic phases of GaAs, GaP, and GaN. A converged construction with respect to all-electron results is described. Computed lattice constants, bulk moduli, and band gaps vary significantly depending on pseudopotential construction or exchange-correlation functional. The Kohn-Sham band gap of the Ga-(V) semiconductors exhibits a distinctive and strong sensitivity to lattice constant, with near-linear dependence of gap on lattice constant for larger lattice constants and Gamma-X crossover that changes the slope of the dependence. This crossover occurs at approximate to 98, 101, and 95% deviation from the equilibrium lattice constant for GaAs, GaP, and GaN, respectively.
