Valleytronics in Strain-Engineered Graphene
Third-party funded project
Project title Valleytronics in Strain-Engineered Graphene
Principal Investigator(s) Schönenberger, Christian
Co-Investigator(s) Calame, Michel
Organisation / Research unit Departement Physik / Experimentalphysik Nanoelektronik (Schönenberger)
Project Website
Project start 01.01.2016
Probable end 31.12.2019
Status Completed

This project is part of the Swiss Nanoscience Institute (SNI)

We aim to explore strain induced effects in the electrical properties of clean ballistic graphene. Graphene can be strained to > 20% yielding gigantic pseudo-magnetic fields which act on the valley-degree of freedom. This opens the door to valleytronics with observable electro-optical effects in ballistic graphene, such as angle-dependent refraction at a p-n interface that dependy on the valley degree of freedom.

Keywords graphene; valleyphysics; strain
Financed by Public Administration

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