This project is part of the Swiss Nanoscience Institute (SNI)

We aim to explore strain induced effects in the electrical properties of clean ballistic graphene. Graphene can be strained to > 20% yielding gigantic pseudo-magnetic fields which act on the valley-degree of freedom. This opens the door to valleytronics with observable electro-optical effects in ballistic graphene, such as angle-dependent refraction at a p-n interface that dependy on the valley degree of freedom.