Ultrafast magnon transistor at room temperature

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Ultrafast magnon transistor at room temperature

JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)

ID	2841492
Author(s)	van Hoogdalem, Kevin A.; Loss, Daniel
Author(s) at UniBasel	Loss, Daniel
Year	2013
Title	Ultrafast magnon transistor at room temperature
Journal	Physical review. B, Condensed matter and materials physics
Volume	88
Number	2
Abstract	We study sequential tunneling of magnetic excitations in nonitinerant systems through triangular molecular magnets. It is known that the quantum state of these molecular magnets can be controlled by application of an electric or a magnetic field. Here, we use this fact to control the flow of a pure magnetization current through the molecular magnet by electric or magnetic means. This allows us to design a system that behaves as a magnon transistor. We show how to combine three magnon transistors to form a NAND gate, and give several possible realizations of the latter, one of which could function at room temperature using transistors with an 11 ns switching time.
Publisher	American Institute of Physics
ISSN/ISBN	0163-1829
edoc-URL	http://edoc.unibas.ch/dok/A6348270
Full Text on edoc	No
Digital Object Identifier DOI	10.1103/PhysRevB.88.024420
ISI-Number	WOS:000322083500005
Document type (ISI)	Article

03/05/2024

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