Data Entry: Please note that the research database will be replaced by UNIverse by the end of October 2023. Please enter your data into the system https://universe-intern.unibas.ch. Thanks

Login for users with Unibas email account...

Login for registered users without Unibas email account...

 
Anisotropic g factor in InAs self-assembled quantum dots
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)
 
ID 2841411
Author(s) Zielke, Robert; Maier, Franziska; Loss, Daniel
Author(s) at UniBasel Loss, Daniel
Year 2014
Title Anisotropic g factor in InAs self-assembled quantum dots
Journal Physical review. B, Condensed matter and materials physics
Volume 89
Number 11
Abstract We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of trial wave functions for a pyramidal geometry with hard-wall confinement. We explicitly find the ground and first excited states and show the associated probability distributions and energies. Subsequently, we use these wave functions and 8-band kappa center dot p theory to derive a Hamiltonian describing the QD states close to the valence band edge. Using a perturbative approach, we find an effective conduction band Hamiltonian describing low-energy electronic states in the QD. From this, we further extract the magnetic field dependent eigenenergies and associated g factors. We examine the g factors regarding anisotropy and behavior under small electric fields. In particular, we find strong anisotropies, with the specific shape depending strongly on the considered QD level. Our results are in good agreement with recent measurements and support the possibility to control a spin qubit by means of g-tensor modulation.
Publisher American Institute of Physics
ISSN/ISBN 0163-1829
edoc-URL http://edoc.unibas.ch/dok/A6348194
Full Text on edoc No
Digital Object Identifier DOI 10.1103/PhysRevB.89.115438
ISI-Number WOS:000333558200010
Document type (ISI) Article
 
   

MCSS v5.8 PRO. 0.349 sec, queries - 0.000 sec ©Universität Basel  |  Impressum   |    
24/04/2024