A fourfold coordinated point defect in silicon

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A fourfold coordinated point defect in silicon

JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)

ID	2832515
Author(s)	Goedecker, S.; Deutsch, T.; Billard, L.
Author(s) at UniBasel	Goedecker, Stefan
Year	2002
Title	A fourfold coordinated point defect in silicon
Journal	Physical Review Letters
Volume	88
Number	23
Pages / Article-Number	235501
Abstract	Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
Publisher	American Physical Society
ISSN/ISBN	0031-9007 ; 1079-7114
edoc-URL	https://edoc.unibas.ch/73856/
Full Text on edoc	No
Digital Object Identifier DOI	10.1103/PhysRevLett.88.235501
PubMed ID	http://www.ncbi.nlm.nih.gov/pubmed/12059373
ISI-Number	000175860500035
Document type (ISI)	Article

24/04/2024

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