A fourfold coordinated point defect in silicon
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)
 
ID 2832515
Author(s) Goedecker, S.; Deutsch, T.; Billard, L.
Author(s) at UniBasel Goedecker, Stefan
Year 2002
Title A fourfold coordinated point defect in silicon
Journal Physical Review Letters
Volume 88
Number 23
Pages / Article-Number 235501
Abstract Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
Publisher American Physical Society
ISSN/ISBN 0031-9007 ; 1079-7114
edoc-URL https://edoc.unibas.ch/73856/
Full Text on edoc No
Digital Object Identifier DOI 10.1103/PhysRevLett.88.235501
PubMed ID http://www.ncbi.nlm.nih.gov/pubmed/12059373
ISI-Number 000175860500035
Document type (ISI) Article
 
   

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