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Charge transport through a single-electron transistor with a mechanically oscillating island
JournalArticle (Originalarbeit in einer wissenschaftlichen Zeitschrift)
 
ID 102788
Author(s) Chtchelkatchev, NM; Belzig, W; Bruder, C
Author(s) at UniBasel Bruder, Christoph
Year 2004
Title Charge transport through a single-electron transistor with a mechanically oscillating island
Journal Physical Review B
Volume 70
Number 19
Pages / Article-Number 193305
Abstract

We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways. The changes in the Coulomb blockade oscillations and in the current noise spectral density help to determine in what way the island oscillates, and allow to estimate the amplitude and the frequency of the oscillations.

Publisher American Institute of Physics
ISSN/ISBN 0163-1829
edoc-URL http://edoc.unibas.ch/dok/A5252838
Full Text on edoc No
Digital Object Identifier DOI 10.1103/PhysRevB.70.193305
ISI-Number WOS:000225477800019
Document type (ISI) Article
 
   

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